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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1756
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 -0.05
FEATURES
* Dual MOS FET chips in small package * 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 m MAX. (VGS = 2.5 V, ID = 3.0 A) * Low Ciss Ciss = 800 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
6.0 0.3 4.4 0.8
1.8 Max.
1.44
0.15
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10 -0.05
PA1756G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)Note1 Total Power Dissipation (1 unit)Note2 Total Power Dissipation (2 unit)Note2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 20 12.0 6.0 24 1.7 2.0 150 -55 to +150 V V A A W W C C
Gate Protection Diode Source Gate Drain
EQUIVALENT CIRCUIT
Body Diode
Notes 1. PW 10 s, Duty Cycle 1 % 2. TA = 25 C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D12909EJ1V0DS00 (1st edition) Date Published February 1999 NS CP (K) Printed in Japan
(c)
1999
PA1756
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) TEST CONDITIONS VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.0 A VDS = 20 V, VGS = 0 V VGS = 12.0 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 3.0A VGS(on) = 4.0 V VDD = 10 V RG = 10 ID = 6.0 A VDD = 16 V VGS = 4.0 V IF = 6.0 A, VGS = 0 V 800 360 70 110 425 1050 1200 11 2.0 4.6 0.8 0.5 4.0 MIN. TYP. 20.0 25.8 0.7 12 10 10 MAX. 30 40 1.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D12909EJ1V0DS00
PA1756
TYPICAL CHARACTERISTICS (TA = 25 C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
10
1
0.1
0.01 0.001
Mounted on ceramic substrate of 2000mm 2 x 1.1mm Single Pulse , 1 unit
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - S
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
100
TA = -50 C -25 C 25 C
VDS=10V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed
10
TA = 75 C 125 C 150 C
50
1
25
ID=3A
0.1
1
10
100
0
2
4
6
8
10
12
14
ID- Drain Current - A
RDS(on) - Drain to Source On-State Resistance - m
VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 VDS = 10 V ID = 1 mA
60
Pulsed
40 VGS=2.5V VGS=4V 20 VGS=4.5V
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0.5
0
1
10 ID - Drain Current - A
100
0
- 50
0
50
100
150
Tch - Channel Temperature -C
Data Sheet D12909EJ1V0DS00
3
PA1756
RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 40 VGS=2.5V VGS=4V 30 VGS=4.5V 20 100 VGS=4V 10 VGS=2.5V VGS=0V 1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
10 ID= 3A - 50 0 50 100 150
0.1 0 0.5 1.0 1.5
0
Tch - Channel Temperature -C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 10 000 td(on), tr, td(off), tf - Switching Time - ns
10 000 Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tf 1 000 td(off) tr td(on) 100
1 000
Ciss Coss
100 Crss
10 0.1
1
10
100
10 0.1
1
VDD =10V VGS(on) = 4V RG =10 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
VDS - Drain to Source Voltage - V
30
6
20
VDD=16V 10V 4V
4 VGS 2
10 VDS 0 4 8 12
0 16
QG - Gate Charge - nC
4
Data Sheet D12909EJ1V0DS00
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 40 ID= 6A
PA1756
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W/package 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 2 unit 1 unit Mounted on ceramic substrate of 2000mm 2 x 1.1mm dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
100 80 60 40 20
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 ID - Drain Current - A VGS=4V 20 VGS=4.5V 15 10 5 VGS=2.5V
FORWARD BIAS SAFE OPERATING AREA 100
d ite ) ID(pulse)=24A im .5V 4 )L on = S( S RD t VG (a ID(DC)=6A
Mounted on ceramic substrate of 2000mm x 1.1mm2 1unit
1 m
ID - Drain Current - A
s
10
10 0m
m
s
Po
10
we rD iss
s
1
DC
ipa
tio
n
Lim
ite
d
0.1 0.1
TA = 25 C Single Pulse 1 10 100 0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10 TA=150C 125C 1 75C
0.1
TA=25C -25C -50C
0
1
2
VDS=10V 3
VGS - Gate to Source Voltage - V
Data Sheet D12909EJ1V0DS00
5
PA1756
[MEMO]
6
Data Sheet D12909EJ1V0DS00
PA1756
[MEMO]
Data Sheet D12909EJ1V0DS00
7
PA1756
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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